CWE-1246 - Improper Write Handling in Limited-write Non-Volatile Memories
- 摘要：Base
- 结构：Simple
- 状态：Incomplete
- 发布日期：2020-02-24
- 更新日期：2025-12-11
名称
Improper Write Handling in Limited-write Non-Volatile Memories
描述
The product does not implement or incorrectly implements wear leveling operations in limited-write non-volatile memories.
Non-volatile memories such as NAND Flash, EEPROM, etc. have individually erasable segments, each of which can be put through a limited number of program/erase or write cycles. For example, the device can only endure a limited number of writes, after which the device becomes unreliable. In order to wear out the cells in a uniform manner, non-volatile memory and storage products based on the above-mentioned technologies implement a technique called wear leveling. Once a set threshold is reached, wear leveling maps writes of a logical block to a different physical block. This prevents a single physical block from prematurely failing due to a high concentration of writes.
常见后果
范围：Availability
影响：DoS: Instability
注释：If wear leveling is improperly implemented, attackers may be able to programmatically cause the storage to become unreliable within a much shorter time than would normally be expected.